dim 1800ess 12 - a000 single switch igbt module replaces ds5857 - 1.1 ds5857 - 2 october 2010 (ln 27614 ) caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 1 / 8 www.dynexsemi.com features ? 10s short circuit withstand ? non punch through silicon ? isolated cu base with al 2 o 3 substrates ? lead free construction applications ? motor controllers ? traction drives the powerline range of high power modules includes half bridge, chopper, dual, single and bi - directional switch configurations covering voltages from 1200v to 6500v and currents up to 2400a. the dim 1800e ss 12 - a000 is a single switch 12 00v, n - channel enhancement mode, insulated gate bipolar transistor (igbt) module. the igbt has a wi de reverse bias safe operating area (rbsoa) plus 10s short circuit withstand. this device is optimised for traction drives and other applications requiring high thermal cycling capability. the module incorporates an electrically isolated base plate and l ow inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: dim 1800e ss 12 - a000 note: when ordering, please use the complete part number key parameters v c es 12 00v v ce(sat) * (typ) 2.2 v i c (max) 18 00 a i c(pk) (max) 36 00 a * measured at the power busbars, not the auxiliary terminals fig. 1 circuit configuration outline type code: e (see fig. 11 for further info rmation) fig. 2 package 5(c) 4(e) 2(g) 1(e) 3(c) 8(e) 6(e) 7(c) 9(c)
dim1800ess 12 - a000 2 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v ces collector - emitter voltage v ge = 0v 1200 v v ges gate - emitter voltage 20 v i c continuous collector current t case = 85 c 18 00 a i c(pk) peak collector current 1ms, t case = 115 c 36 00 a p max max. transistor power dissipation t case = 25 c , t j = 150 c 1 5625 w i 2 t diode i 2 t value v r = 0, t p = 10ms, t j = 125oc 9 00 ka 2 s v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 2500 v thermal and mechanical ratings internal insulation material: al 2 o 3 baseplate material: cu creepage distance: 33 mm clearance: 2 0 mm cti (comparative tracking index): 600 symbol parameter test conditions min typ. max units r th(j - c) thermal resistance C th(j - c) thermal resistance C th(c - h) thermal resistance C j junction temperature transistor - - 150 c diode - - 125 c t stg storage temperature range - - 40 - 125 c screw torque mounting C C C
dim1800ess 12 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 3 / 8 www.dynexsemi.com electrical characteristics t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max u nits i ces collector cut - off current v ge = 0v, v ce = v ces 3 ma v ge = 0v, v ce = v ces , t case = 125 c 75 ma i ges gate leakage current v ge = 20v, v ce = 0v 12 a v ge(th) gate threshold voltage i c = 9 0ma, v ge = v ce 4.5 5.5 6.5 v v ce(sat) ? collector - e mitter saturation voltage v ge = 15v, i c = 18 0 0a 2.2 2.8 v v ge = 15v, i c = 18 00a, t j = 125 c 2.6 3. 3 v i f diode forward current dc 18 00 a i fm diod e maximum forward current t p = 1ms 36 00 a v f ? diode forward voltage i f = 1 8 00a 1.9 2.1 v i f = 1 8 00a, t j = 125 c 1.8 2.1 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz 200 nf q g gate charge 15v 20 c c res reverse transfer capacitanc e v ce = 25v, v ge = 0v, f = 1mhz nf l m module inductance 10 nh r int internal transistor resistance 90 ? sc data short circuit current, i sc t j = 125c, v cc = 900v t p 10s, v ge 15v v ce (max) = v ces C l * x di/dt iec 60747 - 9 10000 a note: ? measured at the power busbars, not the auxiliary terminals * l is the circuit inductance + l m
dim1800ess 12 - a000 4 /8 caution: this devi ce is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 18 0 0a v ge = 15v v ce = 6 00v r g(on) = 1 .2 ? r g(off) = 1 .2 ? l s ~ 6 0nh 1250 n s t f fall time 190 ns e off turn - off energy loss 330 mj t d(on) turn - on delay time 220 ns t r rise time 200 ns e on turn - on energy loss 100 mj q rr diode reverse recove ry charge i f = 18 00a v ce = 6 00v di f /dt = 90 00a/s 210 c i rr diode reverse recovery current 860 a e rec diode reverse recovery energy 110 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) tur n - off delay time i c = 1200a v ge = 15v v ce = 600v r g(on) = 1 .2 ? r g(off) = 1 .2 ? l s ~ 6 0 nh 1450 n s t f fall time 190 ns e off turn - off energy loss 390 mj t d(on) turn - on delay time 230 ns t r rise time 340 ns e on turn - on energy loss 180 mj q rr diode reverse recovery charge i f = 18 00a v ce = 6 00v di f /dt = 80 00a/s 390 c i rr diode reverse recovery current 1100 a e rec diode reverse recovery energy 200 mj
dim1800ess 12 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 5 / 8 www.dynexsemi.com fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collec tor current fig. 6 typical switching energy vs gate resistance
dim1800ess 12 - a000 6 /8 caution: this devi ce is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 diode reverse bias safe operating area fig. 10 transient thermal impedanc e
dim1800ess 12 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 7 / 8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 225 0g module outline type code: e fig. 11 module outline drawing screwing depth max. 16 screwing depth max. 8 6 x m8 3 x m4 dim....esm....... dim....ecm....... dfm....exm....... 7 external connection external connection 5(c) 7(c) 4(e) 6(e) 9(c) 8(e) external connection external connection 3(c) 2(g) 1(e) 7(c) 9(c) 6(e) 8(e) 5(c) 4(e) external connection external connection 3(c) 2(g) 1(e) 5(c) 7(c) 4(e) 6(e) 9(c) 8(e) 8 x 7 ? 57 0.1 171 0.15 190 0.5 20 0.1 40 0.2 124 0.1 140 0.5 79.4 0.2 41.25 0.2 20.25 0.2 61.5 0.3 61.5 0.3 13 0.2 5 0.2 38 0.5 5.2 0.2 40 0.2 28 0.5
dim1800ess 12 - a000 8 /8 caution: this devi ce is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of p roduct applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of t he product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to propert y. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning . always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective g loves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semicond uctors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. produc t status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentativ e form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for vo lume production is in progress. the d atasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom dynex semiconductor ltd doddington road, linc oln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_solutions@dynexsemi.com ? dynex semiconductor ltd. 2005. technical documentation C not for resale.
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